湘潭大學(xué)機(jī)械工程學(xué)院導(dǎo)師：鄭學(xué)軍 正文

[導(dǎo)師姓名]
鄭學(xué)軍

[所屬院校]
湘潭大學(xué)

[基本信息]
導(dǎo)師姓名：鄭學(xué)軍
性別：男
人氣指數(shù)：2563
所屬院校：湘潭大學(xué)
所屬院系：機(jī)械工程學(xué)院
職稱：教授
導(dǎo)師類型：博導(dǎo)
招生專業(yè)：
研究領(lǐng)域：1、低維納米材料及其敏感器件2、半導(dǎo)體納米結(jié)構(gòu)及微納光機(jī)電系統(tǒng)3、壓電材料及傳感元器件4、...

[通訊方式]
辦公電話：073158293210
電子郵件：zhengxuejun@xtu.edu.cn

[個(gè)人簡(jiǎn)述]
“薄膜材料及其器件力學(xué)” 湘潭大學(xué)首個(gè)教育部創(chuàng)新團(tuán)隊(duì)帶頭人(2010)，“低維材料及其器件力學(xué)”湖南省高校科技創(chuàng)新團(tuán)隊(duì)帶頭人(2009)，教育部長(zhǎng)江學(xué)者特聘教授(2009)，國(guó)家杰出青年基金(2008)，湖南省芙蓉學(xué)者特聘教授(2007)。全國(guó)百篇優(yōu)博論文提名獎(jiǎng)(2005)。美國(guó)匹茲堡大學(xué)訪問(wèn)學(xué)者(2005),湘潭大學(xué)一般力學(xué)與力學(xué)基礎(chǔ)博士(2002), 中南大學(xué)橋隧結(jié)構(gòu)工程碩士(1989),國(guó)防科大飛行器固體力學(xué)本科(1985)。1985年7月-2003年6月，中南大學(xué)鐵道學(xué)院任助教、講師、副教授。2003年6月-2014年10月，湘潭大學(xué)教授、博士生導(dǎo)師，2006年10月-2014年10月，任湘潭大學(xué)材料與光電物理學(xué)院副院長(zhǎng)。2003年6月-2011年10月，任湘潭大學(xué)“低維材料及其應(yīng)用技術(shù)教育部重點(diǎn)實(shí)驗(yàn)室 ”副主任。2014年10月至今，任湘潭大學(xué)機(jī)械工程學(xué)院學(xué)院院長(zhǎng)。

[科研工作]
已主持完成的科研項(xiàng)目：
1、上海市科委納米專項(xiàng)(11nm0502600) , 2011-2014年。2、低維鐵電材料的制備、力學(xué)表征及其微器件應(yīng)用，國(guó)家自然科學(xué)基金項(xiàng)目杰出青年基金(10825209), 2008-2012年。3、鈦酸鉍鈉基弛豫型無(wú)鉛壓電薄膜及相關(guān)性能，國(guó)家自然科學(xué)基金項(xiàng)目(50872117), 2009-2011年。4、自組裝半導(dǎo)體壓電納米帶及相關(guān)性能，國(guó)家自然科學(xué)基金項(xiàng)目(10672139), 2007-2009年。5、ZnO, ZnS壓電納米帶及物理力學(xué)性能,國(guó)家教育部和湖南省教育廳重點(diǎn)項(xiàng)目,2007-2009年。6、自組裝半導(dǎo)體壓電納米帶及相關(guān)力學(xué)性能,國(guó)家自然科學(xué)基金(10672139), 2007-2009年。7、無(wú)鉛鐵電薄膜及其納米薄膜微器件，湖南省科技計(jì)劃重點(diǎn)項(xiàng)目，2005-2007年。8、鉍層狀鈣鈦礦鐵電薄膜的制備及其熱沖擊下斷裂失效行為(10472099),國(guó)家自然科學(xué)基金項(xiàng)目,2005-2007年。9、壓電薄膜材料的制備及相關(guān)物理力學(xué)性能,湖南省教育廳青年骨干教師基金項(xiàng)目,2003-2005年。10、壓電薄膜材料的制備及相關(guān)物理力學(xué)性能,湖南省教育廳青年項(xiàng)目,2003-2005年。
在研主持科研項(xiàng)目:
1、GaN半導(dǎo)體納米材料的多場(chǎng)耦合失效機(jī)理(編號(hào)：51272158), 2013-2016年。2、薄膜材料及其器件力學(xué) 教育部“長(zhǎng)江學(xué)者計(jì)劃”獎(jiǎng)勵(lì)計(jì)劃 教育部創(chuàng)新團(tuán)隊(duì)滾動(dòng)資助項(xiàng)目(IRT_14R48)3、薄膜材料及器件力學(xué)，教育部“長(zhǎng)江學(xué)者計(jì)劃”特聘教授項(xiàng)目([2009]17)
發(fā)明專利
1、基于單個(gè)極性半導(dǎo)體納米帶光彈簧的制作方法 鄭學(xué)軍、陳義強(qiáng)、王甲世、姜傳斌、龔倫軍 國(guó)家發(fā)明專利, ZL 10030575.2, 20112、一種測(cè)量納米材料光致硬化性能的方法 鄭學(xué)軍、王甲世、陳義強(qiáng)、楊博、龔倫軍 國(guó)家發(fā)明專利, ZL 10030576.7, 20113、一種實(shí)時(shí)測(cè)量納米材料光致伸縮性能的方法 鄭學(xué)軍、陳義強(qiáng)、王甲世、龔倫軍、余功成 國(guó)家發(fā)明專利, ZL 10030573.3, 20124、一種測(cè)量壓電材料壓電系數(shù)d15的準(zhǔn)靜態(tài)方法 鄭學(xué)軍、彭金峰、劉勛、張勇、孫靜 國(guó)家發(fā)明專利, ZL 10035079.7, 20155、一種氧化鋅納米線生長(zhǎng)所用的催化劑及其應(yīng)用，王現(xiàn)英、謝澍梵、鄭學(xué)軍 中國(guó)專利號(hào)：ZL 201210008229.0,20146、氧化物稀磁半導(dǎo)體/鐵電體異質(zhì)結(jié)構(gòu)及其制備方法 王金斌、何春、鐘向麗、周益春、鄭學(xué)軍 國(guó)家發(fā)明專利, ZL 101262040, 2010
成果獲獎(jiǎng)
1、薄膜材料及其器件力學(xué) 教育部“長(zhǎng)江學(xué)者計(jì)劃”獎(jiǎng)勵(lì)計(jì)劃 教育部創(chuàng)新團(tuán)隊(duì)滾動(dòng)資助項(xiàng)目2014 (排名第一)2、微納材料及器件的力學(xué)理論設(shè)計(jì)與性能表征方法，湖南省自然科學(xué)二等獎(jiǎng)2013 (排名第一)3、無(wú)鉛鐵電薄膜及其器件的失效與性能調(diào)制，湖南省自然科學(xué)一等獎(jiǎng)2012 (排名第二)4、指導(dǎo)碩士研究生王甲世獲湖南省優(yōu)秀碩士學(xué)位論文(2012)5、指導(dǎo)碩士研究生鄭輝獲“湘潭大學(xué)第十六屆研究生校長(zhǎng)優(yōu)秀獎(jiǎng)”(2011)6、薄膜材料及其器件力學(xué) 教育部“長(zhǎng)江學(xué)者計(jì)劃”獎(jiǎng)勵(lì)計(jì)劃 教育部創(chuàng)新團(tuán)隊(duì)2010 (排名第一)7、低維材料及其器件力學(xué) 湖南省高校創(chuàng)新團(tuán)隊(duì)2010 (排名第一)8、薄膜材料及器件力學(xué)，教育部“長(zhǎng)江學(xué)者計(jì)劃”特聘教授項(xiàng)目20099、低維無(wú)機(jī)非金屬材料及微器件，湖南省“芙蓉學(xué)者計(jì)劃”特聘教授項(xiàng)目2007 10、摻銪含量對(duì)Bi4-xEuxTi3 O12鐵電薄膜微結(jié)構(gòu)和鐵電性能的影響，湖南省自然科學(xué)優(yōu)秀學(xué)術(shù)論文一等獎(jiǎng) 2008(排名第一)11、壓電薄膜的斷裂韌性及激光作用下的破壞機(jī)制，全國(guó)100篇優(yōu)秀博士學(xué)位論文提名獎(jiǎng)200512、湖南省優(yōu)秀博士畢業(yè)論文 湖南省人民政府學(xué)位委員會(huì)湖南省教育廳 200513、納米壓痕實(shí)驗(yàn)測(cè)量Pb(Zr0.52Ti0.48)03鐵電薄膜的界面強(qiáng)度，湖南省自然科學(xué)優(yōu)秀學(xué)術(shù)論文一等獎(jiǎng)2004(排名第一)14、湘潭市2001-2003年度自然科學(xué)優(yōu)秀學(xué)術(shù)論文一等獎(jiǎng) 湘潭市科學(xué)技術(shù)協(xié)會(huì) 湘潭市人事局 2004(排名第一)15、材料力學(xué)計(jì)算機(jī)輔助教學(xué)的研究與實(shí)踐 湖南省優(yōu)秀教學(xué)成果二等獎(jiǎng) 1997.7（排名第三）18、L. L Wang, X. J. Luo, X. J. Zheng*, R. Wang and T. Zhang. Direct annealing of electrospun synthesized high-performance porous SnO2 hollow nanofibers for gas sensors, RSC Adv. 3 (2013), 9723-9728 (SCI源刊,影響因子2.562)19、Yanchao She, Xuejun Zheng, Denglong Wang, and Weixi Zhang. Controllable double tunneling induced transparency and solitons formation in a quantum dot molecule. Optics Express 21 (2013), 17392-17403. (SCI源刊,影響因子3.546)20、Y. Wei, H. B. Cheng, X. Y. Wang, and X. J. Zheng. Evaluation on residual stress in Bi3.15(Eu0.7Nd0.15)Ti3O12 polycrystalline ferroelectric thin film by using the orientation average method. Applied Physics Letters, 101, 901-909 (2012). (SCI源刊,影響因子3.82)21、Y. Wei, L. H. Xu, Y. W. Tao, X. J. Zheng, J. H. Yang, D. F. Zou, and S. X. Mao. Width-to-thickness ratio dependence on photoplastic effect of ZnS nanobelt. Applied Physics Letters, 101, 901-904 (2012). (SCI源刊,影響因子3.82) 22、L. H. Xu, D. D. Jiang, and X. J. Zheng. Effect of grain orientation in x-ray diffraction pattern on residual stress in polycrystalline ferroelectric thin film. Journal of Applied Physics 112, 513-521 (2012). (SCI源刊,影響因子2.497)23、X. Liu, X.J. Zheng, J.Y. Liu, K.S. Zhou, D.H. Huang. Effect of annealing temperature on the electrostrictive properties of 0.94(Na0.5Bi0.5)TiO3-0.06BaTiO3 thin films. Journal of Electroceramics, 29(3) (2012), 270-276. (SCI源刊，影響因子1.194)24、S.T. Song, X.J. Zheng, H. Zheng, W. Liu. Evaluation of engineering/ piezoelectric constants of piezoelectric thin film by combining nanoindentation test with FEM. Computational Materials Science, 63 (2012), 134-144. (SCI源刊，影響因子1.522)25、Y. Zhang, X. J. Zheng, X. L. Zhong and S. F. Deng. The ethanol sensing characteristics of ZnO thin films with low operating temperatures synthesized by pulsed laser deposition. Measurement Science and Technology, 23 (2012), 105-107. (SCI源刊，影響因子1.352)26、S.T. Peng, X.J. Zheng, J. Sun, Y. Zhang, L. Zhou, J. H. Zhao, S. F. Deng, M. F. Cao, W. Xiong, K. Peng. Modeling of a micro-cantilevered piezo-actuator considering the buffer layer and electrodes. J. Micromech. Microeng. 22 (2012), 065-075. (SCI源刊，影響因子2.105)27、J. H. Zhao, X. J. Zheng, L. Zhou, Y. Zhang , J. Sun, W.J. Dong, S.H. Deng, S.T. Peng. Investigation of a d15 mode PZT-51 piezoelectric energy harvester with a series connection structure. Smart Mater. Struct. 21 (2012), 105-109. (SCI源刊，影響因子2.089).28、Y. Q. Gong, H. Dong, X. J. Zheng, J. F. Peng, X. J. Li, R. J. Huang. Large piezoelectric response of Bi0.5(Na(1?x)Kx)0.5TiO3 thin films near morphotropic phase boundary identified by multi-peak fitting. J. Phys. D: Appl. Phys. 45 (2012), 301-305. (SCI源刊,影響因子2.544)29、L. Zhou, J. Sun, X. J. Zheng, S. F. Deng, J. H. Zhao, S. T. Peng. Y. Zhang, X. Y. Wang and H. B. Cheng. A model for the energy harvesting performance of shear mode piezoelectric cantilever, Sensors and Actuators A. 179 (2012), 185-192. (SCI源刊,影響因子1.802)30、J. Sun, X. J. Zheng, W. Li, A model for the electrical characteristics of metal-ferroelectric-insulator-semiconductor field-effect transistor. Current Applied Physics, 12(2012), 760-764.31、Y. Zhang, X.J. Zheng, X. L. Zhong, S. F. Deng. The ethanol sensing characteristics of ZnO thin films with low operating temperatures synthesized by pulsed laser deposition. Meas. Sci. Technol. 23(2011),105-107.32、X. J. Zheng, X. C. Cao, J. Sun, B. Yuan, Q. H. Li, Z. Zhu, Y. Zhang, A vacuum pressure sensor based on ZnO nanobelt film, Nanotechnology, 22(2011), 495-501 (1-6).33、Y. Zhang, X. J. Zheng, T. Zhang, Characterization and humidity sensing properties of Bi0.5Na0.5TiO3-Bi0.5K0.5TiO3 powder synthesized by metal-organic decomposition, Sensors and Actuators B: Chemical, 156(2011), 887-892.34、J. Sun, X. J. Zheng, J. Cao, W. Li, Interface effects on the characteristics of metal-ferroelectric-insulator-semiconductor ?eld-effect transistor, Semicond. Sci. Technol., 26(2011), 093-097 (1-6).35、J. Sun, X. J. Zheng, Modeling of MFIS-FETs for the application of ferroelectric random access memory. IEEE Transactions on Electron Devices, 58(2011) 55-59.36、Z. Zhu, X. J. Zheng, D. D. Jiang, Z. C. Yang, The threshold electric field of 180° domain switching in the misfit strain-external electric field phase diagram. J. Appl. Phys, 110(2011), 032-035.37、H. Dong, X. J. Zheng, W. Li, Y. Q. Gong, J. F. Peng, Z. Zhu, The dielectric relaxation behavior of (Na0.82K0.18)0.5Bi0.5TiO3 ferroelectric thin film. J. Appl. Phys., 110(2011), 119-124.38、H. Zheng, X. J. Zheng, S. T. Song, J. Sun, F. Jiao, W. Liu, G. Y. Wang, Evaluation of the elastic modulus of thin film considering the substrate effect and geometry effect of indenter tip. Computational Materials Science, 50(2011), 26-30.39、Y. Zhang, X. J. Zheng, T. Zhang, J. Sun, Y. Bian, J. Song, Gas sensing properties of coral-like Bi0.5K0.5TiO3 powders synthesized by metal-organic decomposition. Meas. Sci. Technol. 22(2011), 195-205.40、J. Sun, X. J. Zheng, W. Yin, M. H. Tang, W. Li, Influences of space charge and electrode on the electrical transport through (Ba,Sr)TiO3 thin film capacitors. Applied Surface Science, 257(2011), 4990-4993.41、B. Yuan, X. J. Zheng, Y. Q. Chen, B. Yang, T. Zhang, High photosensitivity and low dark current of photoconductive semiconductor switch based on ZnO single nanobelt, Solid-State Electronics, 55(2011), 49-53.42、Y. Q. Chen, Y. F. En, Y. Huang, X. D. Kong, X. J. Zheng, and Y. D. Lu, Effects of surface tension and axis stress on piezoelectric behaviors of ferroelectric nanowires. Applied Physics Letters, 99, (2011), 203106-203108 (SCI源刊，影響因子3.726)43、Y. Q. Chen, Y. F. En, Y. Huang, X. D. Kong, W. X. Fang, and X. J. Zheng, Effects of Stress and Depolarization on Electrical Behaviors of Ferroelectric Field-Effect Transistor. IEEE ELECTRON DEVICE LETTERS, 99,(2011), 1-3(SCI源刊，影響因子2.714)44、H. Zheng, X. J. Zheng, J. S. Wang, G. C. Yu, Y. Li, S. T. Song, C. Han, Evaluation the effect of aspect ratio for Young’s modulus of nanobelt using finite element method. Materials and design, 32,(2011), 1407-1413 (SCI源刊，影響因子1.518)45、J. Sun, X. J. Zheng, W. Yin, M. H. Tang, W. Li, Space-charge-limited leakage current in high dielectric constant and ferroelectric thin films considering the field-dependent permittivity. Appl. Phys. Lett., 97.24 (2010): 242905 (SCI源刊，影響因子3.726)46、H. Zheng, X. J. Zheng, J. S. Wang, G. C. Yu, Y. Li, S. T. Song, C. Han, Evaluation the effect of aspect ratio for Young’s modulus of nanobelt using finite element method. Materials and design, 32.3 (2011): 1407-1413 (SCI源刊，影響因子1.518)47、B. Yuan,X. J. Zheng, Y. Q. Chen, B. Yang, T. Zhang, High photosensitivity and low dark current of photoconductive semiconductor switch based on ZnO single nanobelt. Solid-State Electronics, 55, (2011), 49-53. (SCI源刊，影響因子1.422)48、Y. Q. Chen, X. J. Zheng, W. Li, Modeling of flexoelectric effect on capacitor-voltage and memory window of metal-ferroelectric-insulator-silicon capacitor. Appl. Phys. Lett., 96, (2010), 233501 (1-3) (SCI源刊，影響因子3.726)49、X. J. Zheng, G. C Yu, Y. Q. Chen, S. X. Mao, T. Zhang, Photoinduced stiffening and photoplastic effect of ZnS individual nanobelt in nanoindentation. J. Appl. Phys., 108, (2010), 094305. (SCI源刊,影響因子2.497)50、X. J. Zheng, Q. Y. Wu, J. F. Peng, L. He, X. Feng, Y. Q. Chen, D. Z. Zhang, Annealing temperature dependence of effective piezoelectric coefficients for Bi3.15Eu0.85Ti3O12 thin films. J. Mater. Sci., 45, (2010), 3001-3006. (SCI源刊,影響因子1.181)51、X. J. Zheng, J. F. Peng, Y. Q. Chen, L. He, X. Feng, D. Z. Zhang, L. J. Gong, Q. Y. Wu, Enhancement on effective piezoelectric coefficient of Bi3.25Eu0.75Ti3O12 ferroelectric thin films under moderate annealing temperature. Thin Solid Films, 519,(2010), 714-718. (SCI源刊,影響因子1.884)52、D. Z. Zhang, X. J. Zheng, X. Feng, T. Zhang, J. Sun, S. H. Dai, L .J. 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